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IRHNJ57Z30

Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Cu...

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SeekIC No. : 004378107 Detail

IRHNJ57Z30: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·...

IRHNJ57Z30 Data Sheet

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Part Number:
IRHNJ57Z30
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 22* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 22*
IDM Pulsed Drain Current 88
PD @ TC = 25 Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 155 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 1.7 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (for 5s)
Weight 1.0 (Typical) g



Description

International Rectifier's R5TM technology IRHNJ57Z30 provides high performance power MOSFETs for space applications. These devices IRHNJ57Z30 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNJ57Z30 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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