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IRHNJ67234

Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous...

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SeekIC No. : 004378115 Detail

IRHNJ67234: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package...

IRHNJ67234 Data Sheet

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Part Number:
IRHNJ67234
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Low RDS(on)   
·Fast Switching   
·Single Event Effect (SEE) Hardened 
·Low Total Gate Charge 
·Simple Drive Requirements 
·Ease of Paralleling 
·Hermetically Sealed 
·Surface Mount 
·Ceramic Package 
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
12.4
A
ID @ VGS=-12V,TC=100
 CContinuous Drain Curren
7.8
IDM
 Pulsed Drain Current
49.6
PD@ TC= 25
 CMax. Power Dissipatio
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
56
mJ
IAR
 Avalanche Current
12.4
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(for 5s )
 Weight
1.0 ( Typical )
g



Description

International Rectifier's R6TM technology IRHNJ67234 provides superior power MOSFETs for space applications.These devices IRHNJ67234 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy  Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications  such as  DC-DC converters and motor controllers.  These devices IRHNJ67234 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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