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IRHNJ67C30

Features: Low RDS(on)Fast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 3.4 A ...

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SeekIC No. : 004378116 Detail

IRHNJ67C30: Features: Low RDS(on)Fast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpeci...

IRHNJ67C30 Data Sheet

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Part Number:
IRHNJ67C30
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 3.4 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 22
IDM Pulsed Drain Current 13.6
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 76 mJ
IAR Avalanche Current 3.4 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 92 mJ
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150 oC
  Pckg. Mounting Surface Temp. 300 (for 5s)
  Weight 1.0 (Typical) g



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