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IRHNM597110100V

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID@ VGS = -12V, TC = 25 Continuous Drain Current -3...

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SeekIC No. : 004378122 Detail

IRHNM597110100V: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightS...

IRHNM597110100V Data Sheet

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Part Number:
IRHNM597110100V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

 
Parameter
   Units
ID@ VGS = -12V, TC = 25 Continuous Drain Current
-3.1
A
ID@ VGS = -12V, TC =100 Continuous Drain Current
-2.0
IDM
 Pulsed Drain Current
-12.4
PD @ TC = 25
 Max. Power Dissipation
23
W
 Linear Derating Factor
0.18
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
28
mJ
IAR
 Avalanche Current
-3.1
A
EAR
 Repetitive Avalanche Energy
2.3
mJ
dv/dt
 Peak Diode Recovery dv/dt
-21
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Pckg. Mounting Surface Temp.
300 (for 5s)
  Weight
0.25 (Typical)
g



Description

International Rectifier's R5TM technology IRHNM597110100V provides high performance power MOSFETs for space applications. These devices IRHNM597110100V have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNM597110100V retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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