IRL1004

MOSFET N-CH 40V 130A TO-220AB

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SeekIC No. : 003431651 Detail

IRL1004: MOSFET N-CH 40V 130A TO-220AB

floor Price/Ceiling Price

Part Number:
IRL1004
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 130A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5330pF @ 25V
Power - Max: 200W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 130A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5330pF @ 25V


Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
130
ID @ TC = 100°C Continuous Drain Current, VGS @10V
92
A
IDM Pulsed Drain Current
520
PD @TC = 25°C Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
700
mJ
IAR Avalanche Current
78
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)




Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL1004  is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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