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Part Number: IRL404

 

 

 

 

Description: Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing ...


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IRL404 General Description


Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL404 Maximum Ratings

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
160
ID @ TC = 100°C Continuous Drain Current, VGS @10V
110
A
IDM Pulsed Drain Current
640
PD @TC = 25°C Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
620
mJ
IAR Avalanche Current
95
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRL404 datasheet

IRL1004
PDF/DataSheet Download

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