IRLD120

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 10 V
Configuration : Single Dual Drain
Package / Case : HexDIP-4
Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 270 mOhms at 5 V


Description

Third generation HEXFETs from lntemationel rectifier IRLD120 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package of IRLD120  is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

The features of IRLD120 can be summarized as (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)for automatic insertion; (4)end stackable; (5)logic-level gate drive; (6)rasroni specified at Vas=4V & 5V; (7)175°C operating temperature.

The absolute maximum ratings of IRLD120 are (1)ID @, TC=25°C, GS@5.0V continuous drain current: 1.3A; (2)ID @ TC = 100°C, GS@5.0V continuous drain current: 0.94A; (3)pulsed drain current IDM: 10A; (4)PD @ TC = 25°C Max. power dissipation: 1.3W; (5)linear derating factor: 0.0083W/°C; (6)VGS gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 690mJ; (8)IAR avalanche current: 1.3A; (9)EAR repetitive avalanche energy: 0.13mJ; (10)dv/dt peak diode recovery dv/dt: 5.5V/ns; (11)TJ operating junction: -55 to 175°C; (12)TJ TSTG storage temperature range: -55 to 175°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)PD @ TA= 25°C Max. power dissipation: 3.7W.