MOSFET N-Chan 100V 1.3 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 1.3 A | ||
| Resistance Drain-Source RDS (on) : | 270 mOhms at 5 V | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | HexDIP-4 | Packaging : | Tube |