IRLI2505

MOSFET N-CH 55V 58A TO220FP

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SeekIC No. : 003430757 Detail

IRLI2505: MOSFET N-CH 55V 58A TO220FP

floor Price/Ceiling Price

Part Number:
IRLI2505
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 58A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 130nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Power - Max: 63W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 58A
Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Package / Case: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 63W
Supplier Device Package: TO-220AB Full-Pak
Gate Charge (Qg) @ Vgs: 130nC @ 5V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 58 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 41 A
IDM Pulsed Drain Current 360 A
PD @TC = 25°C Power Dissipation 60 W
  Linear Derating Factor 0.42 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 54 A
EAR Repetitive Avalanche Energy 6.3 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300(1.6mm from case)
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRLI2505 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLI2505 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound IRLI2505 used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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