IRLI3615PbF

      The IRLI3615PbF is designed as HEXFET power MOSFET.It would provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
      It has seven features.The first one is that it would use avvanced process technology.The second one is that it would have ultra low on-resistance.The third one is that it would have dynamic dv/dt ratings.The next one is that it would have 175°C operating temerature.The next one is that it would have fast switching.The next one is that it would have fully avalanche rated.The next one is that it would be lead free.That are all the features.
      Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current which would be 14A with condition of Tc=25°C and would be 9.8A with condition of Tc=100°C.The next one is about its pulse drain current which would be 56A.The next one is about its power dissipation which would be 45W.The next one is about its linear derating factor which would be 0.30W/°C.The next one is about its drain to source voltage which would be +/- 16V.The next one is about its single pulse avalanche energy which would be 340mJ.The next one is about its repetitive avalanche energy which would be 4.5mJ.The next one is about its peak diode recovery dv/dt which would be 5V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The next one is about its soldering temperature, for 10 seconds which would be 300°C.
      Also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 150V.The second one is about its breakdown voltage temp. coefficient which would be typ 0.18V/°C.The next one is about its gate threshold voltage which would be min 1.0V and max 2.0V.And so on.For more information please contact us.