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IRLI510ATU

MOSFET 100V N-Channel a-FET Logic Level

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SeekIC No. : 00163731 Detail

IRLI510ATU: MOSFET 100V N-Channel a-FET Logic Level

IRLI510ATU Data Sheet

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Part Number:
IRLI510ATU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 0.44 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Package / Case : I2PAK
Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 0.44 Ohms


Parameters:

Technical/Catalog InformationIRLI510ATU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs440 mOhm @ 2.8A, 5V
Input Capacitance (Ciss) @ Vds 235pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLI510ATU
IRLI510ATU



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