IRLIB9343

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 47nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 14A
Power - Max: 33W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds: 660pF @ 50V


Features:

· Advanced Process Technology
· Key Parameters Optimized for Class-D Audio Amplifier Applications
· Low RDSON for Improved Efficiency
· Low Qg and Qsw for Better THD and Improved Efficiency
· Low Qrr for Better THD and Lower EMI
· 175°C Operating Junction Temperature for Ruggedness
· Repetitive Avalanche Capability for Robustness and Reliability




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	-55	V
VGS	Gate-to-Source Voltage	±20
ID @TC = 25°C	Continuous Drain Current, VGS @ -10V	-14	A
ID @TC = 100°C	Continuous Drain Current, VGS @ -10V	-10
IDM	Pulsed Collector Current	-60
PD @TC = 25°C	Power Dissipation	33	W
PD @TC =100°C	Power Dissipation	20
	Linear Derating Factor	0.26	°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 175
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)

Description

This Digital Audio HEXFET® IRLIB9343 is specifically designed for Class-D audio amplifier applications. This MosFET IRLIB9343 utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features of IRLIB9343 combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.