MFG:TO-220FullPak(Iso) Package Cooled:7850 D/C:IR
MFG: TO-220FullPak(Iso)
Package Cooled: 7850
D/C: IR
Description: This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This...
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
|
Parameter |
Max. |
Units | |
| VDS | Drain-to-Source Voltage |
-55 |
V |
| VGS | Gate-to-Source Voltage |
±20 | |
| ID @TC = 25°C | Continuous Drain Current, VGS @ -10V |
-14 |
A |
| ID @TC = 100°C | Continuous Drain Current, VGS @ -10V |
-10 | |
| IDM | Pulsed Collector Current |
-60 | |
| PD @TC = 25°C | Power Dissipation |
33 |
W |
| PD @TC =100°C | Power Dissipation |
20 | |
| Linear Derating Factor |
0.26 |
°C | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 | |
| Mounting Torque, 6-32 or M3 Screw |
10 lbf•in (1.1 N•m) |
IRLIB9343
PDF/DataSheet Download
This Digital Audio HEXFET® IRLIB4343PbFis specifically designed for Class-D audio amplifier applications. This MosFET IRLIB4343PbFutilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diod...
This Digital Audio HEXFET® IRLIB4343is specifically designed for Class-D audio amplifier applications. This MosFET IRLIB4343 utilizes the latestprocessing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reve...
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