Purchase IRLIZ24NPbF, In-stock IRLIZ24NPbF From SeekIC.


Part Number: IRLIZ24NPbF
Description: The IRLIZ24NPbF is designed as power MOSFET.It provide the designer wit...


Description: The IRLIZ24NPbF is designed as power MOSFET.It provide the designer wit...
The IRLIZ24NPbF is designed as power MOSFET.It provide the designer with an extremely efficient device for use in a wide variety of applications.
It has seven features.The first one is that it would have logic-level gate drive.The second one is that it would have advanced process technology.The third one is that it would have isolated package.The fourth one is that it would have high voltage isolation which means the value would be 2.5KVRMS.The fifth one is that it would have sink to lead creepage dist which means the value would be 4.8mm.The sixth one is that it would have fully avalanche rated.The last one is that it would be lead free.That are all the features.
Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 14A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 9.9A.The third one is about its pulse drain current which would be 72A.The fourth one is about its power dissipation which would be 26W.The fifth one is about its linear derating factor which would be 0.17W/°C.The sixth one is about its gate-to source voltage which would be +/-16V.The seventh one is about its signal pulse avalanche energy which would be 68mJ.The eighth one is about its avalabche current which would be 11A.The ninth one is about its repetitive avalanche energy which would be 4.5mJ.The next one is about its peak diode recovery dv/dt which would be 4.6 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
And also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 55V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.061V/°C.The third one is about its static drain to source on resistance which would be max 0.060 with condition of Vgs=10V, Id=8.4A.And so on.For more information please contact us.
IRL1004
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