MFG:TO-220FullPak(Iso) Package Cooled:7850 D/C:IR
MFG: TO-220FullPak(Iso)
Package Cooled: 7850
D/C: IR
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 22 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 15 | A |
| IDM | Pulsed Drain Current | 110 | A |
| PD @TA = 25°C | Power Dissipation | 37 | A |
| PD @TC = 25°C | Power Dissipation | 43 | W |
| Linear Derating Factor | 0.24 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 110 | mJ |
| IAR | Avalanche Current | 16 | A |
| EAR | Repetitive Avalanche Energy | 3.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
IRLIZ34N
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