MFG:IR Package Cooled:N/A D/C:80
MFG: IR
Package Cooled: N/A
D/C: 80
Description: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast swit...
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
| PARAMETER |
SYMBOL |
LIMIT |
UNIT | ||
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
60 ± 10 |
V | ||
| Continuous Drain Current | VGS at 10V | TC = 25 TC = 100 |
ID IDM |
30 21 120 |
A |
| Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque |
TC = 25 °C for 10 s 6-32 or M3 screw |
EAS PD dV/dt TJ, Tstg |
0.32 400 48 4.5 - 55 to + 175 300d 10 1.1 |
W/°C mJ W V/ns °C lbf ` in N ` m | |
IRLIZ44G
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