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Part Number: IRLL014N

 

MFG: IR

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLL014N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

IRLL014N Maximum Ratings

  Parameter
Max.
Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V**
2.8
A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V*
2.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V*
1.6
IDM Pulsed Drain Current
16
PD @TA = 25°C Power Dissipation (PCB Mount)**
2.1
W
PD @TA = 25°C Power Dissipation (PCB Mount)*
1.0
W
  Linear Derating Factor (PCB Mount)*
8.3
mW/
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
32
mJ
IAR Avalanche Current
2.0
A
EAR Repetitive Avalanche Energy*
0.1
mJ
dv/dt Peak Diode Recovery dv/dt
7.2
V/ns
TJ, TSTG Junction and Storage Temperature Range
-55 to + 150

IRLL014N Features

· Surface Mount
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated

IRLL014N datasheet

IRLL014N
PDF/DataSheet Download

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