IRLML2402

The IRLML2402 has the following features including Generation V Technology;Ultra Low On-Resistance;N-Channel MOSFET;SOT-23 Footprint;Low Profile (<1.1 mm);Available in Tape and Reel;Fast Switching.

Fifth Generation HEXFETs from International Rectifier IRLML2402 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device IRLML2402 design that HEXFET Power MOSFETs are well known for, providesthe designerwith an extremely efficient and reliable device for use in a wide variety of applications.A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve IRLML2402 characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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