MFG:International Rectifier (VA) Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier (VA)
Descriptions: MOSFET N-CH 20V 1.2A SOT-23
The IRLML2402TR is designed as one kind of the fifth generation HEXFETs from international rectifier utiluze advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The IRLML2402TR has seven features and benefits. (1)Generation V technology. (2)Ultra low on-resistance. (3)N-channel MOSFET. (4)SOT-23 footprint. (5)Low profile <1.1mm. (6)Available in tape and reel. (7)Fast switching. Those are all the main features.
Some absolute maximum ratings of IRLML2402TR have been concluded into several points as follow. (1)Its continuous drain current at 4.5V would be 1.2A at Tc=25°C and it would be 0.95A at 100°C. (2)Its pulsed drain current would be 7.4A. (3)Its power dissipation would be 540W/°C. (4)Its linear derating factor would be 4.3W/°C. (5)Its gate to source voltage would be +/-12V. (6)Its peak diode recovery dv/dt would be 5V/ns. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of IRLML2402TR are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V. (2)Its breakdown voltage temperature coefficient would be typ 0.024V/°C. (3)Its static drain to source on-resistance would be max 0.25ohms at Vgs=4.5V and it would be max 0.35ohms at Vgs=2.7V. (4)Its gate threshold voltage would be min 0.7V. (5)Its forward transconductance would be min 1.3S. (6)Its drain to source leakage current would be max 1.0uA. (7)Its gate to source forward leakage would be max -100nA. (8)Its gate to source reverse leakage would be max 100nA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
| Technical/Catalog Information | IRLML2402TR |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.2A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 930mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 110pF @ 15V |
| Power - Max | 540mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLML2402TR IRLML2402TR IRLML2402CT ND IRLML2402CTND IRLML2402CT |
IRLML2402TR
PDF/DataSheet Download
The IRLML2402 has the following features including Generation V Technology;Ultra Low On-Resistance;N-Channel MOSFET;SOT-23 Footprint;Low Profile (<1.1 mm);Available in Tape and Reel;Fast Switching. Fifth Generation HEXFETs from International Rectifier IR...
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