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IRLML2502

Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2 A ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.4 IDM Pulsed Drain Current 33 PD @TA = 25°C Power Dissipation 1.25 W PD @...

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IRLML2502: Specifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2 A ID @ TA = 70°C Continuous Drain Current, VGS @ ...

IRLML2502 Data Sheet

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Part Number:
IRLML2502
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

Parameter Max. Units
VDS   Drain- Source Voltage 20  V 
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.4
IDM Pulsed Drain Current 33
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70°C Power Dissipation 0.8 W
Linear Derating Factor(PCB Mount)* 0.01 W/°C
VGS Gate-to-Source Voltage ±12 V
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C



Description

These N-Channel MOSFETs from International Rectifier IRLML2502 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLML2502 design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.




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