MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | 20 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V | 4.2 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 4.5V | 3.4 | |
| IDM | Pulsed Drain Current | 33 | |
| PD @TA = 25°C | Power Dissipation | 1.25 | W |
| PD @TA = 70°C | Power Dissipation | 0.8 | W |
| Linear Derating Factor(PCB Mount)* | 0.01 | W/°C | |
| VGS | Gate-to-Source Voltage | ±12 | V |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
IRLML2502
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The IRLML2402TRPBF is one member of the IRLML2402 family which is designed as the HEXFET power MOSFET that is available in the standard SOT-23 package to produce a HEXFET power MOSFET with the industry's smallest footprint. This package, dubbed the micro3, i...
The IRLML2402TR is designed as one kind of the fifth generation HEXFETs from international rectifier utiluze advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and rugge...
The IRLML2402 has the following features including Generation V Technology;Ultra Low On-Resistance;N-Channel MOSFET;SOT-23 Footprint;Low Profile (<1.1 mm);Available in Tape and Reel;Fast Switching. Fifth Generation HEXFETs from International Rectifier IR...
These P-Channel MOSFETs from International Rectifier IRLM6402PbFutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLM6402PbF design that ...
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