IRLML2803GPbF

      The feartures of IRLML2803GPbF are Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint, Low Profile (<1.1mm), Available in Tape and Reel, Fast Switching, Lead-Free, Halugen-Free.
      For the IRLML2803GPbF, Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efhcient and reliable device for use in a wide variety of applications. A customized Ieadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile(<1.1mm)ofthe Micro3 allows itto tit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
      The parameters of the IRLML2803GPbF are VGS (Gate-to-Source Voltage)=±20V, ID @ TA = 25°C (Continuous Drain Current, VGS @ 10V)=1.2A, ID @ TA= 70°C (Continuous Drain Current, VGS @ 10V )=0.93A, PD @TA= 25°C(Power Dissipation )=540W, IDM (Pulsed Drain Current)=7.3A, EAS (Single Pulse Avalanche Energy)=3.9mJ, dv/dt(peak diode recovery energy)=5.0mJ, TJ (Operating Junction and)= -55  to + 150°C=TSTG( Storage Temperature Range Soldering Temperature, for 10 seconds ), RJA( Junction-to-Ambient )=230(max)°C/W.