IRLML2803PbF

      The IRLML2803PbF has 8 features.The first one is generation technology.The second one is ultra low on-resistance.The third one is N-channel MOSFET.The fourth one is SOT-23 footprint.The fifth one is low profile (<1.1mm) .The sixth one is available in tape and reel.The seventh one is fast switching.The eighth one is lead-free.
      Fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extremely efficient and reliable device for use in a wide variiety of applications.A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET power MOSFET with the industry's smallest footprint.This package,dubbed the Micro3,is ideal for applications where printed circuit board space is at a premium.The low profile (<1.1mm) of the Micro3 allows it to fit easily into extronics and PCMCIA card.
      The IRLML2803PbF has some information about absolute maximum ratings.ID @ TA = 25°C,when parameter is Continuous Drain Current, VGS @ 10V,the max is 1.2,the units is A.ID @ TA = 70°C,when parameter is Continuous Drain Current, VGS @ 10V,the max is 0.93,the units is A.IDM,when parameter is Pulsed Drain Current,the max is 7.3,the units is A.PD @TA = 25°C,when parameter is Power Dissipation,the max is 540,the units is mW.when parameter is Linear Derating Factor,the max is 4.3,the units is mW/°C.VGS,when parameter is Gate-to-Source Voltage,the max is ±20,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 3.9,the units is mJ.dv/dt,when parameter is Peak diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ ,TSTG,when parameter is Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.
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