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IRLML5203PbF

Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreePinoutSpecifications Parameter Max. Units VDS Drain- Source Voltage -3.0 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0 A ID @ TA = 70°C...

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SeekIC No. : 004378423 Detail

IRLML5203PbF: Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreePinoutSpecifications Parameter Max. Units VDS Drain- Source...

IRLML5203PbF Data Sheet

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Part Number:
IRLML5203PbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge
· Lead-Free


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage -3.0 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.4
IDM Pulsed Drain Current -24
PD @ TA = 25°C Power Dissipation 1.25 W
PD @ TA = 70°C Power Dissipation 0.80
  Linear Derating Factor 10 mW/
VGS Gate-to-Source Voltage ±20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

These P-channel MOSFETs from International Rectifier IRLML5203PbF utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.




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