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MFG:900
Part Number: IRLMS2002
MFG: 900
Description: These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...
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IRLMS2002
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DataSheet
General Description
IRLMS2002 General Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
IRLMS2002 Maximum Ratings
| Parameter |
Max. |
Units | |
| VDS | Drain- Source Voltage |
20 |
V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V |
6.5 |
|
| ID @ TA= 70°C | Continuous Drain Current, VGS @ 4.5V |
5.2 |
A |
| IDM | Pulsed Drain Current |
20 |
|
| PD @TA = 25°C | Power Dissipation |
2.0 |
|
| PD @TA = 70°C | Power Dissipation |
1.3 |
W |
| Linear Derating Factor |
0.016 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 12 |
V |
| TJ, TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
°C |
IRLMS2002
PDF/DataSheet Download
- Datasheet: IRLMS2002
- File Size: 97551 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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