MFG:IR Package Cooled:SOT-23-6 D/C:04+
MFG: IR
Package Cooled: SOT-23-6
D/C: 04+
Description: These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
|
Parameter |
Max. |
Units | |
|
VDS |
Drain- Source Voltage |
-12 |
V |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-5.5 |
A |
|
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -4.5V |
-4.4 | |
|
IDM |
Pulsed Drain Current |
-44 | |
|
PD @TA = 25°C |
Power Dissipation |
1.7 |
W |
|
PD @TA = 70°C |
Power Dissipation |
1.1 | |
|
Linear Derating Factor |
0.013 |
W/°C | |
|
EAS |
Single Pulse Avalanche Energy |
28 |
mJ |
|
VGS |
Gate-to-Source Voltage |
± 12 |
V |
|
TJ, TSTG |
Junction and Storage Temperature Range |
55 to + 150 |
°C |
IRLMS4502
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MOSFET N-CH 20V 6.5A 6-TSOP
MOSFET N-CH 20V 6.5A 6-TSOP
These N-Channel MOSFETs from International Rectifier IRLMS2002PbF utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and...
These N-Channel MOSFETs from International Rectifier IRLMS2002 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device IRLMS2002 for use in batt...
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