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Part Number: IRLMS5703

 

 

 

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Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLMS5703 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

IRLMS5703 Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9
IDM Pulsed Drain Current -13
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C

IRLMS5703 datasheet

IRLMS5703
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