Position: Home  > All Categories> Integrated Circuits (ICs) > IRLMS5703

IRLMS5703

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Current -13 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 W/°C VGS ...

product image

IRLMS5703 Picture
See larger image
SeekIC No. : 004378433 Detail

IRLMS5703: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Curr...

IRLMS5703 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRLMS5703
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/6

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9
IDM Pulsed Drain Current -13
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

Fifth Generation HEXFETs from International Rectifier IRLMS5703 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLMS5703 are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package of IRLMS5703 with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Resistors
A101G
3006P-1-205LF
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
View more