MFG:IR Package Cooled:SOT-23-6 D/C:04+
MFG: IR
Package Cooled: SOT-23-6
D/C: 04+
Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing te...
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V 4.5V | -2.4 | A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V 4.5V | -1.9 | |
| IDM | Pulsed Drain Current | -13 | |
| PD @TA = 25°C | Power Dissipation | 1.7 | W |
| Linear Derating Factor | 13 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
IRLMS6702
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