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Part Number: IRLMS6802PbF

 

 

 

 

Description: These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...


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IRLMS6802PbF General Description


These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

IRLMS6802PbF Maximum Ratings

Symbol Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA= 25 Continuous Drain Current, VGS @ -4.5V -5.6 A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V -4.5 A
IDM Pulsed Drain Current -45 A
PD @ TA = 25 Power Dissipation 2.0 W
PD @ TA = 70 Power Dissipation 1.3 W
  Linear Derating Factor 0.016 W/
EAS Single Pulse Avalanche Energy 34 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRLMS6802PbF Features

·Ultra Low On-Resistance
·P-Channel MOSFET
·Surface Mount
·Available in Tape & Reel
·Lead-Free

IRLMS6802PbF datasheet

IRL1004
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