MFG:IR Package Cooled:D-PAK D/C:09+
MFG: IR
Package Cooled: D-PAK
D/C: 09+
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te...
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
| IDM | Pulsed Drain Current | 72 | |
| PD @TC = 25°C | Power Dissipation | 45 | W |
| Linear Derating Factor | 0.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 68 | mJ |
| IAR | Avalanche Current | 11 | A |
| EAR | Repetitive Avalanche Energy | 4.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRLR024N
PDF/DataSheet Download
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