MFG:IR Package Cooled:D-PAK D/C:09+
MFG: IR
Package Cooled: D-PAK
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
16 |
A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V |
11 | |
| IDM | Pulsed Drain Current |
64 | |
| PD @TA = 25°C | Power Dissipation (PCB Mount) |
35 |
|
| PD @TA = 25°C | Power Dissipation (PCB Mount) |
0.23 |
W |
| Linear Derating Factor |
0.02 |
mW/ | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy |
21 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
38 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
IRLR024Z
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