MFG:IR Package Cooled:06+ D/C:2500/REEL
MFG: IR
Package Cooled: 06+
D/C: 2500/REEL
Description: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast swit...
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU/SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ± 10 | |||
| Continuous Drain Current | VGS at 5.0 V | TC = 25 | ID | 7.7 | A |
| TC = 100 | 4.9 | ||||
| Pulsed Drain Currenta | IDM | 31 | |||
| Linear Derating Factor | 0.33 | W/ | |||
| Linear Derating Factor (PCB Mount)e | 0.020 | ||||
| Single Pulse Avalanche Energyb | EAS | 210 | mJ | ||
| Repetitive Avalanche Currenta | IAR | 7.7 | A | ||
| Repetitive Avalanche Energya | EAR | 4.2 | mJ | ||
| Maximum Power Dissipation | TC = 25 | PD | 42 | W | |
| Maximum Power Dissipation (PCB Mount)e | TA = 25 | 2.5 | |||
| Peak Diode Recovery dV/dtc | dV/dt | 5.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | |||
| Soldering Recommendations (Peak Temperature) | for 10 s | 260d | |||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 5.3 mH, RG = 25 , IAS = 7.7 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 150.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
IRLR120
PDF/DataSheet Download
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