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IRLR210ATM: MOSFET 200V N-Channel a-FET Logic Level

IRLR210ATM Data Sheet

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Part Number:: IRLR210ATM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/7

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US $1.03 - 1.7 / Piece

MOSFET N-Chan 60V 2.7 Amp

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	2.7 A
Resistance Drain-Source RDS (on) :	1.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : TO-252
Continuous Drain Current : 2.7 A

Parameters:

Technical/Catalog Information	IRLR210ATM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.35A, 5V
Input Capacitance (Ciss) @ Vds	240pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR210ATM IRLR210ATM

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IRLR210ATM

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