IRLR3105PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 43 mOhms


Features:

` Logic-Level Gate Drive
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ VGS = 12V, TC = 25	Continuous Drain Current	25	A
ID @ VGS = 12V, TC =100	Continuous Drain Current	18
IDM	Pulsed Drain Current	100
PD @ TC = 25	Max. Power Dissipation	57	W
	Linear Derating Factor	0.38	W/
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	61	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	94
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	3.4	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case )

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRLR3105PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3105PbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this  design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The D-Pak IRLR3105PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRLR3105PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	37 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	710pF @ 25V
Power - Max	57W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR3105PBF IRLR3105PBF