MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 37 A | ||
| Resistance Drain-Source RDS (on) : | 25 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| VDS | Drain-to-Source Voltage | 20 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 37 | A |
| ID TC =100°C | Continuous Drain Current, VGS @ 10V | 26 | A |
| IDM | Pulsed Drain Current | 144 | A |
| PD @ TC = 25 | Maximum Power Dissipation | 35 | W |
| PD @ TC = 100 | Maximum Power Dissipation |
18 |
W |
| Linear Derating Factor | 0.23 | W/ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | IRLR3714ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 37A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 560pF @ 10V |
| Power - Max | 35W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.1nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR3714ZPBF IRLR3714ZPBF |