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IRLR3915

Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon limited) 61 A ID @ TC = 100°C Contin...

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IRLR3915: Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID...

IRLR3915 Data Sheet

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Part Number:
IRLR3915
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

 

 Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon limited) 61 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(See Fig.9) 43

 

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30
IDM Pulsed Drain Current 240

 

PD @TC = 25°C C Power Dissipation 120 W

 

 Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 200 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 600  
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
TSTG Storage Temperature Range		 -55 to + 150 °C

 

 Soldering Temperature, for 10 seconds 300 (1.6mm from case )

 




Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3915 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3915  are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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