MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 61 A | ||
Resistance Drain-Source RDS (on) : | 17 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 61 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 43 | |
ID @ TC = 25 | 30 | ||
IDM | Pulsed Drain Current | 240 | |
PD @ TC = 25 | Max. Power Dissipation | 120 | W |
Linear Derating Factor | 0.77 | W/ | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 200 | mJ |
EAS (6 sigma) | Single Pulse Avalanche Energy Tested Value | 600 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6 mm from case) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3915 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3915 are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRLR3915PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 1870pF @ 25V |
Power - Max | 120W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 92nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR3915PBF IRLR3915PBF |