IRLR4343PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 65 mOhms
Continuous Drain Current : 26 A


Features:

` Advanced Process Technology
`Key Parameters Optimized for Class-D Audio Amplifier Applications
` Low R<sub>DSON</sub> for Improved Efficiency
` Low Q_g and Q_sw for Better THD and Improved Efficiency
` Low Q<sub>rr</sub> for Better THD and Lower EMI
` 175 Operating Junction Temperature for Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability
` Multiple Package Options
` Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	55	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	26	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	19
IDM	Pulsed Drain Current	80
PD @TC = 25	Power Dissipation	79	W
PD @TC = 100	Power Dissipation	39
	Linear Derating Factor	0.53	W/
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 175
	Clamping Pressure		N

Repetitive rating; pulse width limited by max. junction temperature.
Contact factory for mounting information


Description

This Digital Audio HEXFET^® IRLR4343PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLR4343PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLR4343PbF are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

Parameters:

Technical/Catalog Information	IRLR4343PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 50V
Power - Max	79W
Packaging	Tube
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR4343PBF IRLR4343PBF