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IRLR7821CPBF: MOSFET

IRLR7821CPBF Data Sheet

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Part Number:: IRLR7821CPBF
Mfg:: International Rectifier
Supply Ability:: 5000

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Upload time: 2024/4/26

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US $1.03 - 1.7 / Piece

MOSFET N-Chan 60V 2.7 Amp

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	20 V	Continuous Drain Current :	65 A
Resistance Drain-Source RDS (on) :	12.5 mOhms	Mounting Style :	SMD/SMT
Package / Case :	DPAK

Description

Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 12.5 mOhms
Continuous Drain Current : 65 A

Application

·High Frequency Synchronous Buck
   Converters for Computer Processor Power
·High Frequency Isolated DC-DC
   Converters with Synchronous Rectification
   for Telecom and Industrial Use
·Lead-Free

Specifications

	Parameter	Max.	Units
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_D@ T_C = 25	Continuous Drain Current, V_GS@ 10V	65	A
I_D@T_C = 100	Continuous Drain Current, V_GS@10V	47
I_DM	Pulsed Drain Current	260
P_D @T_C= 25	Maximum Power Dissipation	75	W
P_D@T_C = 100	Maximum Power Dissipation	37.5	W
	Linear Derating Factor	0.50	W/
TJ TSTG	Operating Junction and Storage Temperature Range	0.50 -55 to + 175

Parameters:

Technical/Catalog Information	IRLR7821CPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	10 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 15V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR7821CPBF IRLR7821CPBF

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