IRLR7843CPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Packaging: Tube
Manufacturer: International Rectifier
Power - Max: 140W
Current - Continuous Drain (Id) @ 25° C: 161A
Input Capacitance (Ciss) @ Vds: 4380pF @ 15V


Application

·High Frequency Synchronous Buck Converters for Computer Processor Power
·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
·Lead-Free


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	161	A
ID @ TC =100°C	Continuous Drain Current, VGS @ 10V	113	A
IDM	Pulsed Drain Current	620	A
PD @ TC = 25	Maximum Power Dissipation	140	W
PD @ TC =100°C	Maximum Power Dissipation	71	W
	Linear Derating Factor	0.95	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300