MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 161 A | ||
Resistance Drain-Source RDS (on) : | 4 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
VDS |
Drain-Source Voltage |
30 |
V |
VGS |
Gate-to-Source Voltage |
±20 |
A |
ID @ Tc = 25 | Continuous Drain Current, VGS |
161 | |
ID @ Tc = 100 | Continuous Drain Current, VGS |
113 | |
IDM |
Pulsed Drain Current |
620 | |
PD @Tc= 25 |
C Max. Power Dissipation |
140 |
W |
ID @ Tc = 100 |
Continuous Drain Current, VGS |
71 |
|
Linear Derating Factor |
0.95 |
W | |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
Technical/Catalog Information | IRLR7843PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 161A |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 4380pF @ 15V |
Power - Max | 140W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR7843PBF IRLR7843PBF |