IRLR8103TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Power - Max: 89W
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 89A


Parameters:

Technical/Catalog Information	IRLR8103TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	89A
Rds On (Max) @ Id, Vgs	7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	89W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLR8103TR IRLR8103TR