IRLR8503

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Tube
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 44A
Power - Max: 62W
Input Capacitance (Ciss) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V


Specifications

Parameter		Symbol	IRLR8503	Units
Drain-Source Voltage		VDS	30
Gate-Source Voltage		VGS	±20
Continuous Drain or Source Current (VGS 10V)	TC = 25°C	ID	44
	TC = 90°C		32
Pulsed Drain Current		IDM	196
Power Dissipation	TC = 25°C	PD	62
	TC = 90°C		30
Junction & Storage Temperature Range		TJ,TSTG	55 to 150
Continuous Source Current (Body Diode)		IS	15
Pulsed source Current		ISM	196

Description

This new device IRLR8503 employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.

The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including R_DS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Q_sw & R_DS(on) for reduced losses in control FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

Parameters:

Technical/Catalog Information	IRLR8503
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	16 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1650pF @ 25V
Power - Max	62W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLR8503 IRLR8503