MOSFET N-CH 30V 44A DPAK
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 44A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 15A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 20nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1650pF @ 25V | ||
Power - Max: | 62W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
Parameter | Symbol | Limit | Units | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
40 ±20 |
V V | |
Continuous Drain or Source Current (VGS 10V) |
TC = 25 TC = 90 |
ID IS |
44 32 |
A |
Pulsed Drain Current | IDM | 196 | ||
Power Dissipation | TC = 25 TC = 90 |
PD | 62 30 |
W |
Junction & Storage Temperature Range | TJ,Tstg | 55 to 150 | ||
Continuous Source Current (Body Diode) | IS | 15 | A | |
Pulsed source Current | ISM | 196 |
This new device IRLR8503PbF employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes IRLR8503PbF ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.
The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.