IRLR8503PBF

MOSFET N-CH 30V 44A DPAK

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SeekIC No. : 003432208 Detail

IRLR8503PBF: MOSFET N-CH 30V 44A DPAK

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Part Number:
IRLR8503PBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 44A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1650pF @ 25V
Power - Max: 62W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Tube
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 44A
Power - Max: 62W
Input Capacitance (Ciss) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V


Features:

• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current applications
• Lead-Free



Specifications

Parameter Symbol Limit Units
Drain-Source Voltage

Gate-Source Voltage
VDS

VGS
40

±20
V

V
Continuous Drain or Source
Current (VGS 10V)
TC = 25

TC = 90
ID

IS

44

32
A


Pulsed Drain Current IDM 196
Power Dissipation TC = 25

TC = 90
PD 62

30
W
Junction & Storage Temperature Range TJ,Tstg 55 to 150
Continuous Source Current (Body Diode) IS 15 A
Pulsed source Current ISM
196



Description

This new device IRLR8503PbF  employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.

The reduced conduction losses makes IRLR8503PbF  ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.




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