IRLR8715CPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 10nC @ 4.5V
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Current - Continuous Drain (Id) @ 25° C: 51A
Power - Max: 44W
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds: 830pF @ 13V


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom


Specifications

Symbol	Parameter	Max.	Units
	Linear Derating Factor	0.29	W/
VDS VGS	Drain-to-Source Voltage Gate-to-Source Voltage	25 ±20	V
ID @ TC = 25 ID @ TC = 100 IDM	Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current	51 36 200	A
PD @ TC = 25 PD @ TC = 100	Maximum Power Dissipation Maximum Power Dissipation	44 22	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 ~ +175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Parameters:

Technical/Catalog Information	IRLR8715CPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	51A
Rds On (Max) @ Id, Vgs	9.4 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds	830pF @ 13V
Power - Max	44W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR8715CPBF IRLR8715CPBF