MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 65 A | ||
| Resistance Drain-Source RDS (on) : | 11.8 mOhms | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
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Lead-Free
| Symbol | Parameter |
Max. |
Units |
| VDS | Drain-Source Voltage |
30 |
V
|
| VGS | Gate-to-Source Voltage |
±20 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
65 |
A |
| ID @ TC= 100 | Continuous Drain Current, VGS @ 10V |
46 | |
| IDM | Pulsed Drain Current1 |
260 | |
| PD @TC = 25 | Power Dissipation |
65 |
W |
| PD @TC = 100 | Power Dissipation |
33 | |
| Linear Derating Factor |
0.43 |
W/ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
| Technical/Catalog Information | IRLR8721PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 65A |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1030pF @ 15V |
| Power - Max | 65W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR8721PBF IRLR8721PBF |