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IRLS510A

MOSFET 100V N-Channel a-FET Logic Level

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IRLS510A: MOSFET 100V N-Channel a-FET Logic Level

IRLS510A Data Sheet

floor Price/Ceiling Price

US $ .26~.52 / Piece | Get Latest Price
Part Number:
IRLS510A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.52
  • $.44
  • $.32
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.44 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.44 Ohms


Features:

  Logic-Level Gate Drive
  Avalanche Rugged Technology
  Rugged Gate Oxide Technology
  Lower Input Capacitance
  Improved Gate Charge
  Extended Safe Operating Area
  Lower Leakage Current : 10 A (Max.) @ VDS = 100V
 Lower RDS(ON) : 0.336 (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
4.5
A
Continuous Drain Current (TC=100°C)
3.1
IDM
 Drain Current-Pulsed
20
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
54
mJ
IAR
 Avalanche Current
4.5
A
EAR
 Repetitive Avalanche Energy
2.3
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
23
0.15
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRLS510A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs440 mOhm @ 2.25A, 5V
Input Capacitance (Ciss) @ Vds 235pF @ 25V
Power - Max23W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / CaseTO-220F
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLS510A
IRLS510A



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