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IRLS530A

MOSFET

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SeekIC No. : 00164765 Detail

IRLS530A: MOSFET

IRLS530A Data Sheet

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Part Number:
IRLS530A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10.7 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220F
Continuous Drain Current : 10.7 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.101 (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
10.7
A
Continuous Drain Current (TC=100°C)
7.5
IDM
 Drain Current-Pulsed
49
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
228
mJ
IAR
 Avalanche Current
10.7
A
EAR
 Repetitive Avalanche Energy
3.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
36
0.24
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



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