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IRLS620A

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00160680 Detail

IRLS620A: MOSFET 200V N-Channel a-FET Logic Level

IRLS620A Data Sheet

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Part Number:
IRLS620A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220F
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.609 (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
4.1
A
Continuous Drain Current (TC=100°C)
2.5
IDM
 Drain Current-Pulsed
18
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
33
mJ
IAR
 Avalanche Current
4.1
A
EAR
 Repetitive Avalanche Energy
2.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
26
0.21
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



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