Purchase IRLS640A, In-stock IRLS640A From SeekIC.
MFG:TO-220F Package Cooled:7850 D/C:FAIRCHILD
- Table of contents:
IRLS640A
-
Suppliers
DataSheet
General Description
IRLS640A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
9.8 |
A |
| Continuous Drain Current (TC=100°C) |
6.2 | ||
|
IDM |
Drain Current-Pulsed |
63 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
64 |
mJ |
|
IAR |
Avalanche Current |
18 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5 |
V/ns |
|
PD |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
40 0.32 |
W W/°C |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
IRLS640A Features
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.145 (Typ.)
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.145 (Typ.)
IRLS640A
PDF/DataSheet Download
- Datasheet: IRLS640A
- File Size: 264293 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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