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IRLS640A

MOSFET 200V N-Channel a-FET Logic Level

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IRLS640A: MOSFET 200V N-Channel a-FET Logic Level

IRLS640A Data Sheet

floor Price/Ceiling Price

US $ .6~.86 / Piece | Get Latest Price
Part Number:
IRLS640A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~250
  • Unit Price
  • $.86
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.8 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.18 Ohms
Continuous Drain Current : 9.8 A


Features:

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
 Lower RDS(ON) : 0.145 (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25°C)
9.8
A
Continuous Drain Current (TC=100°C)
6.2
IDM
 Drain Current-Pulsed
63
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
64
mJ
IAR
 Avalanche Current
18
A
EAR
 Repetitive Avalanche Energy
4.0
mJ
dv/dt
 Peak Diode Recovery dv/dt
5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
40
0.32
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRLS640A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9.8A
Rds On (Max) @ Id, Vgs180 mOhm @ 4.9A, 5V
Input Capacitance (Ciss) @ Vds 1705pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 5V
Package / CaseTO-220F
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLS640A
IRLS640A



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