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Part Number: IRLU024NPbF

 

MFG: IR

 

 

Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te...


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IRLU024NPbF General Description


Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU024NPbF Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 72
PD @TC = 25°C C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRLU024NPbF datasheet

IRLU024NPBF
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