MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl
IRLU024NPBF: MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 110 mOhms | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
IDM | Pulsed Drain Current | 72 | |
PD @TC = 25°C | C Power Dissipation | 45 | W |
Linear Derating Factor | 0.3 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 68 | mJ |
IAR | Avalanche Current | 11 | A |
EAR | Repetitive Avalanche Energy | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Fifth Generation HEXFET® Power MOSFETs from International Rectifier IRLU024NPbF utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRLU024NPbF are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLU024NPbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Technical/Catalog Information | IRLU024NPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 5V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLU024NPBF IRLU024NPBF |