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MFG:IR  Package Cooled:IPAK  D/C:4  

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Part Number: IRLU024Z

 

MFG: IR

Package Cooled: IPAK

D/C: 4

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRLU024Z General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRLU024Z Maximum Ratings

Parameter
Max.
Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
16
A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V
11
IDM Pulsed Drain Current
64
PD @TA = 25°C Power Dissipation (PCB Mount)
35
PD @TA = 25°C Power Dissipation (PCB Mount)
0.23
W
Linear Derating Factor
0.02
mW/
VGS Gate-to-Source Voltage
± 16
V
EAS(Thermally limited) Single Pulse Avalanche Energy
21
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
38
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ, TSTG Operating Junction and Storage Temperature Range
-55 to + 150

IRLU024Z Features

· Logic Level
· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax

IRLU024Z datasheet

IRLU024Z
PDF/DataSheet Download

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